Part NumberManufacturersUnit PriceAvailabilityDescriptionDatasheetAction
Rochester Electronics$ 425.25001606RF POWER TRANSISTORSfile
Rochester Electronics$ 199.73701130RF POWER FIELD-EFFECT TRANSISTORfile
Rochester Electronics$ 98.14503300RF PFET, 1-ELEMENT, ULTRA HIGH Ffile
Ampleon$ 142.83001615RF FET LDMOS 65V 17DB SOT1121Bfile
Ampleon$ 614.80801979BLL9G1214L-600/SOT502/TRAYfile
Wolfspeed, Inc.$ 340.28101599RF MOSFET HEMT 440199file
Wolfspeed, Inc.$ 362.61001625RF MOSFET HEMT 50V 440193file
NXP Semiconductors$ 172.80001917RF MOSFET LDMOS 65V NI-1230H-4Sfile
NXP Semiconductors$ 184.92301550FET RF 2CH 133V 230MHZ NI-1230file
Wolfspeed, Inc.$ 434.25001595240W GAN HEMT 28V 2.7-3.1GHZ FETfile
Ampleon$ 458.97301521BLA9H0912L-1200P/SOT539/TRAYfile
Ampleon$ 1366.70402148BLA9H0912LS-1200P/SOT539/TRAYfile
Wolfspeed, Inc.$ 863.79301537RF MOSFET HEMT 40V 440210file
Wolfspeed, Inc.$ 1896.18001514700W GAN HEMT 50V 0.9-1.2GHZ FETfile
Integra Technologies$ 1588.06001510GAN, RF POWER TRANSISTOR, L-BANDfile
Wolfspeed, Inc.$ 1050.75001600GAN HEMT 50V 1400W 0.96-1.4GHZfile
STMicroelectronics$ 23.86002222FET RF 40V 500MHZ PWRSO-10file
NXP Semiconductors$ 6.991212000RF MOSFET LDMOS 28V PLD1.5Wfile
Rochester Electronics$ 11.79007383RF POWER FIELD-EFFECT TRANSISTORfile
NXP Semiconductors$ 15.35766000FET RF 2CH 40V 520MHZ TO270-4file
NXP Semiconductors$ 39.02001501RF MOSFET LDMOS 28V TO270-2 GULLfile
Ampleon$ 43.96501877LDMOS 2-stage integrated Doherty MMICfile
Ampleon$ 35.79821641BLM9D1822S-60PBG/OMP780/REELDPfile
Wolfspeed, Inc.$ 122.72001510RF MOSFET HEMT 28V DIEfile
Wolfspeed, Inc.$ 64.09801676RF MOSFET HEMT 28V 12DFNfile
NXP Semiconductors$ 43.98303180FET RF 66V 880MHZ TO270-2file
Wolfspeed, Inc.$ 134.12701610RF MOSFET HEMT 28V DIEfile
Ampleon$ 87.30901555BLC10G18XS-551AVT/SOT1258/TRAYDPfile
Wolfspeed, Inc.N/A39RF MOSFET HEMT 28V 440196file
Ampleon$ 206.96001503BLC9G27XS-380AVT/SOT1258/TRAYDfile
Total 3622
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RF FETs, MOSFETs Overview
RF FETs (Radio Frequency Field-Effect Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are discrete semiconductor devices used in RF (Radio Frequency) applications for amplification, switching, and signal processing. RF FETs and MOSFETs are designed to operate efficiently at high frequencies, making them suitable for wireless communication systems, radar systems, RF power amplifiers, and other RF circuits. They offer low noise, high gain, and fast switching characteristics, essential for RF signal processing and transmission. Basic RF FETs and MOSFETs suitable for low-power RF applications are generally more affordable. High-frequency RF FETs and MOSFETs with higher power ratings, lower noise figures, and advanced packaging options may command higher prices. When purchasing these devices, determine the frequency range and power requirements of your RF circuit to select RF FETs or MOSFETs with suitable specifications. Consider factors such as gain, noise figure, input/output impedance matching, and linearity for optimal RF performance.
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