The CGHV40200PP is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) discrete semiconductor component. It is known for its high power and high frequency performance, making it ideal for applications such as radar systems, satellite communications, and electronic warfare.
Key features of the CGHV40200PP include a high power density of 20 W/mm, excellent thermal stability, and high linearity. It operates at a frequency range of 5-20 GHz with a power output of up to 200 W. The device has a low parasitic capacitance and offers high efficiency, in addition to being highly robust and reliable in harsh operating conditions.
Overall, the CGHV40200PP is a high-performance discrete semiconductor component that offers superior power handling capabilities and high frequency operation, making it a top choice for demanding RF and microwave applications
