The BLF647PS,112 is a discrete semiconductor component designed for use in high power RF applications. This component is a power LDMOS transistor that operates in the frequency range of 50 MHz to 1000 MHz.
Key features of the BLF647PS,112 include its high power handling capabilities, with a maximum output power of 1250 watts. It also has a high gain of 23.5 dB and a high efficiency of 32%. This makes it ideal for applications requiring high power amplification, such as broadcast transmitters, radar systems, and industrial heating equipment.
The BLF647PS,112 is designed for use in a push-pull configuration, which helps to minimize distortion and improve overall performance. It also features a rugged design with excellent thermal stability, ensuring reliable operation even in harsh environments.
Overall, the BLF647PS,112 is a versatile and high-performance discrete semiconductor component that is well-suited for a wide range of high power RF applications
