The MRFE6VP61K25HR5 is a high-power discrete semiconductor component, specifically designed for RF applications. It is a high ruggedness N-channel enhancement-mode MOSFET transistor, capable of handling high power levels up to 1.8 GHz.
Key features of the MRFE6VP61K25HR5 include a high output power of 1250W, a high gain of 25dB, and excellent linearity for efficient signal amplification. It also has a wide operating frequency range of 1.8 - 600 MHz, making it suitable for a variety of RF applications including broadcast, aerospace, and defense.
The MRFE6VP61K25HR5 is designed for easy integration into RF power amplifiers, providing reliable and high-performance solutions for demanding applications. Its rugged design and high power handling capability make it ideal for high-power RF systems that require consistent performance under harsh operating conditions
