The CGHV35150F is a high power discrete GaN HEMT (High Electron Mobility Transistor) designed for high performance RF and microwave applications. This component is capable of operating at frequencies up to 4 GHz, making it ideal for radar systems, communication transmitters, and other high frequency applications. With a voltage rating of 150 V and a continuous drain current of 3.5 A, the CGHV35150F offers high power and efficiency in a compact package. It features a low thermal resistance for improved thermal management, ensuring reliable performance under high power conditions. The CGHV35150F also boasts a high breakdown voltage, low on-resistance, and high linearity, making it a versatile choice for demanding RF and microwave designs. Overall, the CGHV35150F is a robust and high-performance discrete semiconductor component for power amplification in RF and microwave systems
