The MRFX1K80HR5 is a discrete semiconductor component that is specifically designed for RF power applications. It is a high-power LDMOS transistor that operates in the frequency range of 1.8-400 MHz.
Key features of the MRFX1K80HR5 include a high output power of 1800 watts, a high gain of 23 dB, and excellent thermal stability. It also features a rugged design that can withstand high voltages and temperatures, making it suitable for demanding applications such as broadcast transmitters, industrial heating systems, and radar systems.
The MRFX1K80HR5 is built using the latest LDMOS technology, which ensures high efficiency and reliability. It also features a compact form factor and is easy to integrate into RF power amplifier circuits. Additionally, it has a low input capacitance and high breakdown voltage, making it ideal for high-power RF applications. Overall, the MRFX1K80HR5 is a reliable and high-performance discrete semiconductor component for RF power applications
