BF998E6327

Name: BF998E6327
Brand: Infineon Technologies
SKU: 6C8FA9-DS
Price: 0.1941 USD
Availability: InStock

12V 30mA 200mW N Channel SOT-143 MOSFETs

1 : $0.1941

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Dasenic Part Number

6C8FA9-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

BF998E6327

Customer Reference

Datasheet

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Sample

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11910 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SOT-143

Quantity

Unit Price

$ 0.1941

Total

$ 0.19

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Infineon Technologies
Discrete Semiconductor Devices	RF FETs, MOSFETs
Product Status	Active
Voltage - Rated	12 V
Package / Case	TO-253-4, TO-253AA
Frequency	1GHz
Current Rating ( Amps)	15mA
Supplier Device Package	SOT143 (SC-61)
Transistor Type	N-Channel
Gain	28dB
Voltage - Test	8 V
Noise Figure	2.8dB
Current - Test	10 mA

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The BF998E6327 is a high frequency N-channel dual-gate MOSFET transistor. It is designed for applications in VHF/UHF amplifiers, mixers, oscillators, and RF modulators. The component is characterized by low noise figure, high gain, and high linearity, making it ideal for communication systems and RF circuits. It has a maximum operating voltage of 20V and a maximum power dissipation of 350mW. The BF998E6327 is offered in a SOT143 package, which is compact and easy to mount on PCBs. With a wide operating temperature range of -55°C to 150°C, this component is suitable for various challenging environments. Overall, the BF998E6327 is a reliable and high-performance discrete semiconductor component for RF applications