The MRF8S7170NR3 is a high-power discrete semiconductor component designed for RF amplification applications. This transistor operates in the frequency range of 1750-2000 MHz and is capable of delivering up to 170 watts of power output. It features a high gain of 22 dB, making it ideal for use in high-power RF amplifiers.
This component is built with rugged construction and high-quality materials to ensure reliable performance and long-term durability. It also offers excellent thermal stability and low thermal resistance, allowing for efficient heat dissipation.
The MRF8S7170NR3 is designed for ease of integration into RF amplifier designs, with a compact footprint and surface-mount packaging. It is suitable for use in various applications, including wireless infrastructure, aerospace, and defense.
Overall, the MRF8S7170NR3 is a high-performance discrete semiconductor component that offers high power handling, high gain, and reliable performance, making it an ideal choice for demanding RF amplifier applications
