The CY14V104NA-BA25XI is an IC (Integrated Circuit) component manufactured by Cypress Semiconductor Corp. It is a non-volatile static RAM (nvSRAM) that combines the benefits of both SRAM and non-volatile memory technologies. Here is an overview of the key features of this IC component:
1. Non-volatile Memory: This IC component has a non-volatile memory that retains data even without power. It uses an integrated charge trap non-volatile memory technology, ensuring data integrity in various environmental conditions.
2. High Density: The CY14V104NA-BA25XI offers a storage capacity of up to 4 megabits (512K x 8 bits) in a single IC package, providing ample space for storing critical data.
3. Fast Read and Write Access: It provides fast access times, with a maximum access time of 25 ns for both read and write operations. This makes it suitable for applications that require quick data retrieval and storage.
4. Low Power Consumption: The IC component is designed to be power-efficient, consuming low power during both active and standby modes. The low power consumption makes it suitable for battery-powered devices or applications where energy efficiency is crucial.
5. High Endurance: With a minimum endurance of 1 million write cycles per byte, this IC component can withstand a high number of write operations without compromising its reliability and long-term usage
