The GT28F800B3T110 is an IC (integrated circuit) component that belongs to the GT28F800B3T1xx series, which is developed by Intel? Corporation. It is a Flash memory device specifically designed for use in various electronic systems and applications. Here are the key features and an overview of this specific IC component:
1. Storage Capacity: The GT28F800B3T110 offers a storage capacity of 8 megabits (1 megabyte) in a single NOR Flash memory array. This allows for storing a significant amount of data and code.
2. Organization and Architecture: The IC is organized into blocks, pages, and sectors, providing flexibility for data storage and execution. It follows a uniform 256-byte page size architecture, enhancing data manipulation and programming efficiency.
3. High-Speed Performance: With high-performance read and write operations, the GT28F800B3T110 ensures rapid data access and effective programming. It supports a standard asynchronous 8-bit data bus for efficient data transfer.
4. Wide Voltage Range: This IC component operates at a voltage range of 2.7V to 3.6V, allowing it to be integrated into a wide range of systems with varying power supply configurations.
5. Advanced Security Features: The GT28F800B3T110 incorporates various security protocols to protect stored data. It supports a lock/unlock feature, enabling portions of memory to be write-protected or read-protected. Furthermore, it includes a unique identifier for enhanced system security.
6. Extended Endurance: With its advanced NOR flash memory technology, the GT28F800B3T110 ensures reliable and long-lasting performance. It offers a minimum of 100,000 erase cycles and a minimum of 20 years of data retention.
7. Package and Pin Compatibility: The IC is available in a 48-ball thin small outline package (TSOP), ensuring compatibility with a wide range of PCB (printed circuit board) designs and assembly processes.
8. Industrial Temperature Range: The GT28F800B3T110 is designed to operate within an extended industrial temperature range of -40
