The GT28F800B3T120 is an IC (Integrated Circuit) component manufactured by the brand Intel. It is a Flash memory device that falls under the NOR type category. Here are some key features of the GT28F800B3T120:
1. Capacity: The GT28F800B3T120 has a capacity of 8 megabits (1 megabyte) of non-volatile memory. This allows it to store a significant amount of data for various applications.
2. Organization: The device is organized into 1,048,576 bytes or 131,072 words. Each byte or word can be individually accessed and written.
3. Parallel NOR Flash: It utilizes a parallel interface, allowing for high-speed data transfer and reliable performance.
4. Operating Voltage: The GT28F800B3T120 operates at a supply voltage ranging from 2.7V to 3.6V. This flexibility in voltage range makes it compatible with various voltage systems.
5. High-Speed Performance: It offers fast access times, allowing for quick retrieval and manipulation of data. The device has a Read access time of 120ns and a typical sector erase time of 18ms.
6. Erase and Write Operations: The GT28F800B3T120 supports both block erase and byte/word programming operations. Block erase allows for erasing a specific large chunk of memory, while byte/word programming allows for programming smaller portions without affecting the entire memory.
7. Data Retention: This flash memory device is designed to retain data for a minimum of 20 years, ensuring long-term data integrity.
8. Industrial Temperature Range: The GT28F800B3T120 is suitable for use in industrial environments, as it can operate within a wide temperature range from -40
