The IC component GE28F008B3BA90 is a flash memory chip developed by Intel. This chip offers a range of key features that make it suitable for various applications. Here is an overview of its key features:
1. Memory Capacity: The GE28F008B3BA90 has a memory capacity of 8 megabits (8 Mb) or 1 megabyte (1 MB). This allows for storing a significant amount of data.
2. Flash Memory Technology: It utilizes the NOR flash memory technology, which enables faster read and write speeds compared to other types of memory. It offers high-performance data storage and retrieval.
3. Organization: The chip is organized into blocks, sectors, and pages. It consists of 128 blocks, each having 64 sectors, and each sector includes 16 pages. This organization allows for efficient management and retrieval of data.
4. High-Speed Operation: The GE28F008B3BA90 offers a fast synchronous read access time of 90 ns, ensuring quick access to stored information. This makes it suitable for applications that require high-speed data transfer.
5. Enhanced Features: This flash memory chip includes several enhanced features to improve overall performance. It has a sophisticated write-protect scheme, hardware data protection, and automatic program and erase algorithms, ensuring data integrity and reliability.
6. Voltage Compatibility: The chip operates at a supply voltage ranging from 2.7 to 3.6 volts, making it compatible with a wide range of electronic devices and systems.
7. Industrial Temperature Range: The GE28F008B3BA90 is designed to operate reliably within an extended industrial temperature range of -40