The CY7C1512V18-250BZXC is an Integrated Circuit (IC) component manufactured by Cypress Semiconductor Corp. It is a synchronous static random-access memory (SRAM) device with a storage capacity of 18 Megabits (Mbits). This IC is specifically designed for high-performance applications where fast and reliable data storage and retrieval are crucial.
Key Features of CY7C1512V18-250BZXC:
1. High Speed: The CY7C1512V18-250BZXC operates at a clock frequency of up to 250 MHz, enabling rapid data access and transmission. It provides a maximum access time of 2.5 nanoseconds (ns), ensuring quick response times for critical real-time applications.
2. Large Storage Capacity: With a total capacity of 18 Mbits, this IC offers ample space for storing large amounts of data. This makes it suitable for applications that require extensive memory, such as networking equipment, telecommunications infrastructure, and high-end computing systems.
3. Synchronous Operation: The CY7C1512V18-250BZXC supports synchronous operation, meaning it synchronizes read and write operations with an external clock signal. This ensures data integrity and precise control over the timing of memory operations, making it suitable for high-speed data processing.
4. Low Power Consumption: This IC component is power-efficient, thanks to its advanced CMOS technology
