The CY62126ESL-45ZSXI is an IC (Integrated Circuit) component produced by Cypress Semiconductor. It is a high-performance, low-power Static Random-Access Memory (SRAM) device that offers various key features, making it suitable for a wide range of applications.
Key Features of CY62126ESL-45ZSXI:
1. Density and Organization: The CY62126ESL-45ZSXI offers a memory density of 128 Kilobits (Kb), organized as 16,384 words by 8 bits. This configuration allows it to store a large amount of data efficiently.
2. Low-Power Operation: It operates at a low voltage range of 1.4V to 3.6V, enabling energy-efficient performance. The device consumes minimal power during standby and active modes, making it ideal for battery-powered applications.
3. High-Speed Access: With a speed grade rating of 45, the CY62126ESL-45ZSXI allows for fast access times. It provides access times as low as 45 nanoseconds, enabling rapid data retrieval and processing.
4. Multiple Operating Modes: This IC component supports various operating modes, including asynchronous read and write operations. It also offers a programmable write protection feature to prevent accidental data modification.
5. Reliability and Durability: The CY62126ESL-45ZSXI is designed to provide high reliability and endurance
