The IC component IDT71T75602S133PF8 is a high-speed and low-power synchronous static random-access memory (SRAM) device manufactured by IDT (Integrated Device Technology). It is designed to provide high-performance memory solutions for various applications.
Key Features:
1. Density: The IDT71T75602S133PF8 boasts a capacity of 4,194,304 bits organized into 262,144 words of 16 bits each. This makes it suitable for storing and retrieving a large amount of data.
2. High-Speed Operation: With a synchronous interface, this SRAM operates at a clock frequency of 133 MHz. This high-speed performance enables quick access and data transfer rates, reducing latency in memory-intensive applications.
3. Low-Power Consumption: The IDT71T75602S133PF8 is designed to operate at a low voltage range of 1.7V to 1.95V, resulting in reduced power consumption. This feature is particularly advantageous in portable devices, making it an efficient choice for battery-powered applications.
4. Asynchronous Output Enable and ZZ Function: The device supports asynchronous output enable pins, allowing easy interfacing with other components. Additionally, the ZZ function allows the output to be placed in low impedance when deselected, ensuring better control over the device's behavior
