M29F400BB90N1

Name: M29F400BB90N1
Brand: Micron Technology
SKU: 5947EC-DS
Availability: InStock

IC FLASH 4MBIT PARALLEL 48TSOP

1 : $0.0000

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Dasenic Part Number

5947EC-DS

Manufacturer

Micron Technology

Manufacturer Part #

M29F400BB90N1

Customer Reference

Datasheet

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Sample

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365 Days Warranty
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27 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

48-TFSOP (0.724", 18.40mm Width) Tray

Quantity

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Manufacturer	Micron Technology
Integrated Circuits (ICs)	Memory
Product Status	Obsolete
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	48-TFSOP (0.724", 18.40mm Width)
Technology	FLASH - NOR
Supplier Device Package	48-TSOP
Memory Size	4Mbit
Memory Type	Non-Volatile
Voltage - Supply	4.5V ~ 5.5V
Access Time	90 ns
Memory Format	FLASH
Memory Interface	Parallel
Write Cycle Time - Word, Page	90ns
Base Product Number	M29F400
Memory Organization	512K x 8, 256K x 16
Packaging	Tray

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	3 (168 Hours,30°C/60%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8542.32.0071
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The IC component M29F400BB90N1 is a high-performance 4-megabit (Mb) flash memory device. Here are some key features of this IC component: 1. Memory Size: The M29F400BB90N1 offers a memory size of 4 megabits, equivalent to 512 kilobytes (KB). This allows for ample storage capacity for various applications. 2. Organization: The IC is organized as 512K x 8 bits, indicating that it can store up to 512 kilobytes of data in eight-bit chunks. This organization is ideal for microcontroller-based systems that require byte-level access. 3. High-Speed Performance: The M29F400BB90N1 operates at high speeds, offering access times as low as 70 nanoseconds. This allows for rapid reading and writing of data, enabling fast data transfers in applications. 4. Low Power Consumption: This IC component is designed with low power consumption in mind, making it suitable for battery-powered devices and energy-efficient systems. It has different standby and operating power options to optimize power usage. 5. Erase and Write Cycles: The flash memory offers a guaranteed minimum of 10,000 erase and write cycles. This durability ensures reliable and long-lasting storage for critical data. 6. Sector Architecture: The M29F400BB90N1 is divided into numerous sectors, each of which can be independently erased and programmed