IS43DR16128B-3DBL-TR

IC DRAM 2GBIT PARALLEL 84TWBGA
part number has RoHS
1 : $0.0000

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Dasenic Part Number
B0E1E9-DS
Manufacturer
Manufacturer Part #
IS43DR16128B-3DBL-TR

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1641 In Stock

MOQ
1PCS
Delivery Time
Ship Within 48 Hours
Packaging
84-TFBGA Tape & Reel (TR)

Quantity

Get pricing info from knowledgeable sales

ManufacturerISSI®
Integrated Circuits (ICs)Memory
Product StatusActive
Operating Temperature0°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case84-TFBGA
TechnologySDRAM - DDR2
Supplier Device Package84-TW-BGA (10.5x13.5)
Memory Size2Gbit
Memory TypeVolatile
Voltage - Supply1.7V ~ 1.9V
Clock Frequency333 MHz
Access Time450 ps
Memory FormatDRAM
Memory InterfaceParallel
Write Cycle Time - Word, Page15ns
Base Product NumberIS43DR16128
Memory Organization128M x 16
PackagingTape & Reel (TR)

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Environmental & Export Classifications
EU RoHS StatusROHS3 Compliant
MSL Rating3 (168 Hours,30°C/60%RH)
REACH StatusREACH Unaffected
US ECCNEAR99
HTS US8542.32.0036
China RoHS StatusGreen Symbol: Green and environmentally friendly product
Description (v) Features
The IS43DR16128B-3DBL-TR is an integrated circuit (IC) component manufactured by Integrated Silicon Solution Inc. (ISSI). It is a high-performance CMOS synchronous DRAM (SDRAM) device designed for use in various applications requiring high-speed data storage. This IC component offers a capacity of 16 megabits (2 megabytes) with a data width of 16 bits. The key features of the IS43DR16128B-3DBL-TR include: 1. SDRAM Architecture: The IC follows a synchronous DRAM architecture, allowing for high-speed and efficient data transfers. It utilizes simultaneous operations to improve performance and reduce latency. 2. Fast Data Transfer Rate: The IC supports a fast data transfer rate of up to 133 MHz, enabling rapid exchange of data between the memory module and the processor. This high-speed transfer rate enhances overall system performance. 3. Burst Mode Operation: The IS43DR16128B-3DBL-TR incorporates burst mode operation, which allows for sequential data access. Burst mode improves memory access times by allowing a sequential burst of data to be fetched without the need for individual transactions. 4. Low Power Consumption: This IC is designed to be power-efficient. It operates at a low voltage range (1.7V - 1.95V) and features a power-down mode to conserve energy when not in use

In Stock: 1641

MOQ
1PCS
Packaging
84-TFBGA Tape & Reel (TR)
Delivery Time
Ship Within 48 Hours
Shipping Origin
Shenzhen or Hong Kong Warehouse

Quantity

Get pricing info from knowledgeable sales

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