The IC component S34MS04G200BHI000 is a Flash memory device developed by Cypress Semiconductor. It is a high-performance NAND Flash memory with a capacity of 4 gigabits (Gb) or 512 megabytes (MB). Here are some key features of this IC component:
1. Density: The S34MS04G200BHI000 provides a storage capacity of 4 Gb, making it suitable for applications that require moderate to high storage requirements.
2. Organization: This IC component is organized as 4,096 blocks, with each block consisting of 128 pages. Each page has a size of 2,048 bytes, resulting in a total addressable space of 8,388,608 pages.
3. High-Speed Performance: It offers fast data transfer rates, thanks to its asynchronous or synchronous interfaces. It provides efficient programming and erasing capabilities, minimizing the time required for data operations.
4. Reliable and Durable: The S34MS04G200BHI000 incorporates several features to ensure data integrity and durability. It supports a 50,000-program/erase cycle endurance, ensuring a reliable and long lifespan for the IC component.
5. Advanced Security Features: This IC component includes security features to protect sensitive data from unauthorized access. It supports a hardware protection mechanism, such as locking individual blocks or entire memory regions.
6. Voltage Compatibility: The S34MS04G200BHI000 operates at a voltage range between 2
