The IC component W972GG8KB-18 is a high-capacity CMOS Static Random Access Memory (SRAM) that offers reliable and efficient memory storage.
Key features of the W972GG8KB-18 include:
1. High Capacity: The IC component has a capacity of 8 gigabits (1 gigabyte) which enables it to store a large amount of data.
2. CMOS Technology: The W972GG8KB-18 utilizes Complementary Metal-Oxide-Semiconductor (CMOS) technology, which provides low power consumption and high speed performance.
3. 18ns Access Time: This IC component has a relatively fast access time of 18 nanoseconds, allowing for quick retrieval and storage of data.
4. Burst Mode Operation: The W972GG8KB-18 supports burst mode operation, enabling a sequence of consecutive data to be read or written in a single burst memory cycle.
5. Asynchronous Operation: It supports synchronous/asynchronous read and write operations, making it compatible with different data transfer protocols and systems.
6. Voltage Compatibility: The W972GG8KB-18 operates at a voltage range of 2.3V to 3.6V, providing flexibility in various applications.
7. Byte-Wide Control: The IC component has a byte-wide control feature, allowing individual bytes to be accessed and manipulated independently
