The CY7C1315CV18-250BZI is a high-performance synchronous SRAM (Static Random Access Memory) integrated circuit (IC) component designed by Cypress Semiconductor. This IC is optimized for various applications that require high-speed, low-power, and reliable memory storage.
Key Features:
1. Memory Capacity: The CY7C1315CV18-250BZI offers a memory capacity of 18 megabits (2,097,152 words x 9 bits). This allows for storing a large amount of data in a compact IC form factor, suitable for many high-performance applications.
2. High-Speed Operation: With a synchronous interface, this IC offers fast access times, enabling rapid data retrieval and efficient data handling. It operates with a clock cycle time of 2.0 ns (nanoseconds), which enables high-speed data transfer and processing.
3. Low Power Consumption: The CY7C1315CV18-250BZI is designed to be power-efficient. It operates with a low standby current and provides power management features, allowing for reduced power consumption without compromising performance.
4. Multiple Operating Modes: This IC supports various operating modes to suit different application requirements. It includes a standard synchronous flow-through mode, as well as an asynchronous mode for flexible read and write operations
