The CY7C1311CV18-200BZC is an integrated circuit (IC) component manufactured by Cypress Semiconductor Corp, a leading provider of high-performance digital and mixed-signal integrated circuits. This specific IC is a part of Cypress's high-density synchronous SRAM (Static Random Access Memory) family.
The CY7C1311CV18-200BZC is designed to offer 4 Megabytes (32 Megabits) of high-performance SRAM, based on a 2T cell utilizing a high-speed CMOS process. It operates with a single +1.8V power supply, making it suitable for low-power applications. Furthermore, the IC is organized as 512K x 36 bits, providing a larger memory space for storage and retrieval of data.
Key Features:
1. High-Density Memory: The IC provides 4 Megabytes (32 Megabits) of SRAM, which allows for efficient storage of a significant amount of data.
2. Low Power Consumption: Operating within a single +1.8V power supply, the IC minimizes power consumption, making it suitable for battery-powered devices and energy-efficient applications.
3. Fast Access Times: With a synchronous interface, the IC delivers fast access times, ensuring quick retrieval and transfer of data.
4. Burst Mode Operation: The CY7C1311CV18-200BZC supports burst mode operation, allowing multiple data transfers in a single access cycle, further enhancing performance
