The R1LV0108ESN-7SI#B0 is an integrated circuit (IC) component specifically designed for system integration and memory applications. It is a non-volatile static random access memory (SRAM) device developed by Renesas Electronics Corporation. Below, you'll find a brief overview and key features of the R1LV0108ESN-7SI#B0 IC component:
Overview:
The R1LV0108ESN-7SI#B0 is a 1-megabit (1Mbit) CMOS low-power SRAM device. It offers reliable performance and high-speed access to stored data, making it ideal for various applications that require frequent read/write operations. The IC component operates at a low power supply voltage, making it energy-efficient and suitable for battery-powered devices. It follows the industry-standard 32-pin SOP (Small Outline Package) footprint, ensuring easy integration into existing systems.
Key Features:
1. High Storage Capacity: With a density of 1Mbit, the R1LV0108ESN-7SI#B0 provides ample storage space for data-intensive applications.
2. Fast Access Times: This IC component offers speedy access times, allowing efficient retrieval of stored data.
3. Low Power Consumption: The R1LV0108ESN-7SI#B0 operates at a low power supply voltage, minimizing energy consumption and extending battery life
