R1LV0108ESA-7SI#S0

The R1LV0108ESA-7SI#S0 is an Integrated Circuit (IC) component that offers a range of key features suitable for various applications. It is a memory device designed by Renesas Electronics Corporation. Here is an overview of this IC component along with its key features: 1. Memory Type: The R1LV0108ESA-7SI#S0 is a static random-access memory (SRAM) device. SRAM is used when high-speed read and write operations are required. 2. Memory Capacity: It has a total memory capacity of 1 megabit (1 Mb) or 128 kilobytes (128 KB). This makes it suitable for applications that require moderate memory storage. 3. Organization: The IC is organized as 128 kilobytes by 8 bits, meaning it has 128 kilobytes of memory divided into 8-bit pieces. 4. Low Power Consumption: The R1LV0108ESA-7SI#S0 features low power consumption, making it energy-efficient and suitable for battery-powered devices. 5. Operating Voltage: It operates at a low voltage between 2.2V and 3.6V, making it compatible with a wide range of devices and systems. 6. High-Speed Performance: The IC offers high-speed performance with access times as low as 10 nanoseconds. This enables rapid data transfer and memory retrieval