IDT71V67602S150BQ

The IC component IDT71V67602S150BQ is a high-speed asynchronous static random-access memory (SRAM) device manufactured by Integrated Device Technology (IDT). It offers a wide range of applications, such as networking equipment, telecommunications, and high-performance computing systems. Here are key features of this IC component: 1. Organization: The IDT71V67602S150BQ has a capacity of 4 Megabit (4M) and is organized as 256K x 16 bits. This means it can store 256 kilobytes of data and has a 16-bit data bus. 2. High-Speed Performance: This SRAM device operates at high speeds, with a maximum access time of 10 nanoseconds (ns). It provides fast access to data, making it suitable for applications that require quick retrieval and storage of information. 3. Asynchronous Architecture: The IDT71V67602S150BQ utilizes an asynchronous design, allowing it to operate with different clocks and data rates. It doesn't require any external clock signals for operation, making it more flexible and compatible with various systems. 4. Low Power Consumption: It features a low standby current to save power when not actively accessing data. The device enters a standby mode automatically when not in use, reducing overall power consumption and enabling energy-efficient designs. 5. 3.3V Operation: The IC operates at a voltage supply of 3