71V2546S150BG8

IC SRAM 4.5MBIT PARALLEL 119PBGA
part number has RoHS
1 : $19.3938

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Dasenic Part Number
7F824D-DS
Manufacturer Part #
71V2546S150BG8

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1308 In Stock

MOQ
1PCS
Delivery Time
Ship Within 48 Hours
Packaging
119-BGA
Quantity
Unit Price
$ 19.3938
Total
$ 19.39

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.
ManufacturerRenesas Electronics
Integrated Circuits (ICs)Memory
Product StatusActive
Operating Temperature0°C ~ 70°C (TA)
Package / Case119-BGA
TechnologySRAM - Synchronous, SDR (ZBT)
Supplier Device Package119-PBGA (14x22)
Memory Size4.5Mb (128K x 36)
Memory TypeVolatile
Voltage - Supply3.135V ~ 3.465V
Clock Frequency150 MHz
Access Time3.8 ns
Memory FormatSRAM
Memory InterfaceParallel

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Environmental & Export Classifications
EU RoHS StatusRoHS Compliant
REACH StatusREACH is not affected
US ECCNEAR99
China RoHS StatusGreen Symbol: Green and environmentally friendly product
Description (v) Features
The IC component 71V2546S150BG8 is a high-speed asynchronous static RAM (SRAM) manufactured by IDT (Integrated Device Technology). Below is an overview of the key features of this IC component: 1. Density: The 71V2546S150BG8 is a 256K x 16 (4,194,304-bit) SRAM, offering high memory capacity for storing data. 2. High-speed access: It provides fast access times of 10 ns, allowing for quick retrieval and storage of data. 3. Low power consumption: This IC component operates with a low power supply range of 3.0V to 3.6V, resulting in reduced power consumption, making it suitable for mobile and battery-powered devices. 4. Organization and interface: It has a 16-bit-wide data bus and provides a parallel interface, enabling efficient data transfer and compatibility with various microcontrollers and processors. 5. Asynchronous operation: The 71V2546S150BG8 operates asynchronously, meaning that there is no need for external clocking or timing signals. It simplifies the system design and reduces the complexity of interfacing with other ICs. 6. Byte and page write operation: This SRAM supports both byte and page write operations. Byte write allows selective writing of individual bytes, while page write enables writing of multiple bytes within a page, enhancing flexibility and efficiency in data manipulation

In Stock: 1308

MOQ
1PCS
Packaging
119-BGA
Delivery Time
Ship Within 48 Hours
Shipping Origin
Shenzhen or Hong Kong Warehouse
Quantity
Unit Price
$ 19.3938
Total
$ 19.39

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.
Delivery
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