The IC component 71V2546S100BGI8 is a SRAM (Static Random Access Memory) device manufactured by Integrated Device Technology (IDT). It is a high-speed, low-power CMOS (Complementary Metal-Oxide-Semiconductor) SRAM designed for a wide range of applications that require high performance and reliability.
Some key features of the IC component 71V2546S100BGI8 are as follows:
1. Memory Capacity: The 71V2546S100BGI8 offers a memory capacity of 2,097,152 words or 4,194,304 bytes. Each word consists of 16 bits, which makes the total memory size 32 Mb (megabits).
2. Organization: The memory is organized in a 2M x 16 configuration, meaning it has 2 million rows and each row contains 16 bits. This organization allows for efficient data storage and retrieval.
3. High-Speed Performance: The IC component operates at a clock frequency of up to 100 MHz, providing fast access times and data transfer rates. It offers a random access time of 10 ns, allowing for quick read and write operations.
4. Low Power Consumption: The SRAM device is designed with low power requirements to conserve energy, making it suitable for battery-powered devices and applications where power efficiency is crucial
