MT41J512M8RH-093:E

The IC component MT41J512M8RH-093:E is a high-speed dynamic random-access memory (DRAM) device manufactured by Micron Technology. It is primarily used in computer systems and other electronic devices that require fast and reliable memory storage. Key features of the MT41J512M8RH-093:E IC component include: 1. Memory Capacity: The MT41J512M8RH-093:E offers a memory capacity of 4 gigabits (512 megabytes). This large storage capacity makes it suitable for complex and memory-intensive applications. 2. High-Speed Performance: With a maximum clock frequency of 933 MHz, the MT41J512M8RH-093:E provides fast data transfer rates. It supports Double Data Rate 3 (DDR3) signaling, enabling high bandwidth and improved overall system performance. 3. Organization and Data Transfer: The IC component is organized into 8 banks, each consisting of 8,192 rows and 1,024 columns. It uses a 64-bit wide data bus for efficient data transfer between the memory controller and the device. 4. Operating Voltage: The MT41J512M8RH-093:E operates at a standard voltage of 1.5 volts, making it compatible with most DDR3 memory interfaces. This voltage level ensures stable and reliable operation. 5. Refresh Options: The IC component supports various refresh options, including self-refresh and power-down modes. These options help optimize power consumption while maintaining data integrity