MT29F16G08ABABAWP-IT:B TR

Name: R6020ENJTL
Brand: ROHM Semiconductor
SKU: 1B4665-DS
Price: 2.412 USD
Availability: InStock

IC FLASH 16GBIT PAR 48TSOP I

1 : $0.0000

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Dasenic Part Number

622718-DS

Manufacturer

Micron Technology

Manufacturer Part #

MT29F16G08ABABAWP-IT:B TR

Customer Reference

Datasheet

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45 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

48-TFSOP (0.724", 18.40mm Width) Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®

Quantity

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Manufacturer	Micron Technology
Integrated Circuits (ICs)	Memory
Product Status	Obsolete
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	48-TFSOP (0.724", 18.40mm Width)
Technology	FLASH - NAND
Supplier Device Package	48-TSOP I
Memory Size	16Gbit
Memory Type	Non-Volatile
Voltage - Supply	2.7V ~ 3.6V
Memory Format	FLASH
Memory Interface	Parallel
Base Product Number	MT29F16G08
Memory Organization	2G x 8
Packaging	Tape & Reel (TR)
Packaging	Cut Tape (CT)
Packaging	Dasenic-Reel®

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	3 (168 Hours,30°C/60%RH)
REACH Status	REACH Unaffected
US ECCN	3A991B1A
HTS US	8542.32.0071
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The IC component MT29F16G08ABABAWP-IT:B TR is a flash memory storage device manufactured by Micron Technology. It is a NAND-based device with a capacity of 16 GB. Below are some key features of this IC component: 1. High Capacity: The MT29F16G08ABABAWP-IT:B TR offers a storage capacity of 16 GB, providing ample space for storing various types of data. 2. NAND Flash Technology: It utilizes NAND flash technology, which offers high density and non-volatility, making it suitable for a wide range of applications such as smartphones, tablets, and other portable devices. 3. SLC NAND: The device uses Single-Level Cell (SLC) NAND technology, which provides a high level of performance, endurance, and reliability compared to Multi-Level Cell (MLC) NAND. 4. High-Speed Data Transfer: It supports a high-speed data transfer interface, enabling fast read and write operations. This feature is crucial for applications that require quick access to stored data. 5. Error Correction Code: The MT29F16G08ABABAWP-IT:B TR incorporates an advanced error correction code (ECC) algorithm, which ensures accurate data retrieval and improves the overall reliability of the device. 6. Wear-Leveling Algorithm: The flash memory includes a wear-leveling algorithm that evenly distributes write operations across the memory cells