M58LT256JST8ZA6E

IC FLASH 256MBIT PARALLEL 80LBGA

1 : $0.0000

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Dasenic Part Number

B06D75-DS

Manufacturer

Micron Technology

Manufacturer Part #

M58LT256JST8ZA6E

Customer Reference

Datasheet

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49 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

80-LBGA Tray

Quantity

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Manufacturer	Micron Technology
Integrated Circuits (ICs)	Memory
Product Status	Obsolete
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	80-LBGA
Technology	FLASH - NOR
Supplier Device Package	80-LBGA (10x12)
Memory Size	256Mbit
Memory Type	Non-Volatile
Voltage - Supply	1.7V ~ 2V
Clock Frequency	52 MHz
Access Time	85 ns
Memory Format	FLASH
Memory Interface	Parallel
Write Cycle Time - Word, Page	85ns
Base Product Number	M58LT256
Memory Organization	16M x 16
Packaging	Tray

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	3 (168 Hours,30°C/60%RH)
REACH Status	REACH Unaffected
US ECCN	3A991B1A
HTS US	8542.32.0071
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The M58LT256JST8ZA6E is an IC (Integrated Circuit) component manufactured by STMicroelectronics. It is a non-volatile memory device from the M58 series, specifically designed as a 256Kbit (32K x 8) Serial Electrically Erasable Programmable Read-Only Memory (EEPROM). Here are some key features and characteristics of the M58LT256JST8ZA6E: 1. Memory Capacity: The IC component offers a total memory capacity of 256Kbits, divided into 32K words of 8 bits each. 2. Serial Interface: It utilizes a serial interface for communication, supporting SMBus (System Management Bus) and I2C (Inter-Integrated Circuit) protocols. 3. Low Power Consumption: The device operates at low power consumptions, making it suitable for battery-powered applications. 4. Wide Voltage Range: The IC operates over a wide voltage range, from 1.8V to 5.5V, providing flexibility for integration into various systems. 5. High Speed: It has a high-speed clock frequency of up to 1 MHz, allowing for fast data transfer and addressing. 6. Organized in Pages: The memory is divided into 64 pages, with each page containing 64 bytes. This organization enables efficient read and write operations by reducing the number of data transfers