M29W400BB90N1

Name: M29W400BB90N1
Brand: Micron Technology
SKU: F003FB-DS
Availability: InStock

IC FLASH 4MBIT PARALLEL 48TSOP

1 : $0.0000

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Dasenic Part Number

F003FB-DS

Manufacturer

Micron Technology

Manufacturer Part #

M29W400BB90N1

Customer Reference

Datasheet

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Sample

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365 Days Warranty
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26 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

48-TFSOP (0.724", 18.40mm Width) Tray

Quantity

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Manufacturer	Micron Technology
Integrated Circuits (ICs)	Memory
Product Status	Obsolete
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	48-TFSOP (0.724", 18.40mm Width)
Technology	FLASH - NOR
Supplier Device Package	48-TSOP
Memory Size	4Mbit
Memory Type	Non-Volatile
Voltage - Supply	2.7V ~ 3.6V
Access Time	90 ns
Memory Format	FLASH
Memory Interface	Parallel
Write Cycle Time - Word, Page	90ns
Base Product Number	M29W400
Memory Organization	512K x 8, 256K x 16
Packaging	Tray

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	3 (168 Hours,30°C/60%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8542.32.0071
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The M29W400BB90N1 is a 4-megabit (512K x 8) UV-erasable and electrically programmable Flash memory integrated circuit (IC) component manufactured by STMicroelectronics. Below are some key features and an overview of the IC component: 1. Memory Size: The M29W400BB90N1 offers a total memory size of 4 megabits, which is equivalent to 512 kilobytes (KB). This allows for storing a significant amount of data in various applications. 2. Organization: The memory is organized in an 8-bit configuration, where each memory location is 8 bits (1 byte) in width. With a 512K x 8 configuration, the IC provides a total of 512 kilobytes of storage capacity. 3. Supply Voltage: The IC operates on a single power supply voltage of 2.7V to 3.6V. This range allows for flexibility in choosing the appropriate power source based on the system requirements. 4. Fast Access Time: The M29W400BB90N1 offers fast access time, with a maximum access time of 90 nanoseconds. This quick access ensures efficient data retrieval, contributing to the overall system performance. 5. Sector Architecture: The memory is divided into multiple sectors, allowing selective erasure of specific sectors rather than the entire memory array. This feature enables efficient use of memory and simplifies the data management process