M29DW323DB70N3E

IC FLASH 32MBIT PAR 48TSOP I

1 : $0.0000

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Dasenic Part Number

DF59B9-DS

Manufacturer

Micron Technology

Manufacturer Part #

M29DW323DB70N3E

Customer Reference

Datasheet

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Sample

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54 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

48-TFSOP (0.724", 18.40mm Width) Tray

Quantity

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Manufacturer	Micron Technology
Integrated Circuits (ICs)	Memory
Product Status	Obsolete
Operating Temperature	-40°C ~ 125°C (TA)
Mounting Type	Surface Mount
Package / Case	48-TFSOP (0.724", 18.40mm Width)
Technology	FLASH - NOR
Supplier Device Package	48-TSOP I
Memory Size	32Mbit
Memory Type	Non-Volatile
Voltage - Supply	2.7V ~ 3.6V
Access Time	70 ns
Memory Format	FLASH
Memory Interface	Parallel
Write Cycle Time - Word, Page	70ns
Base Product Number	M29DW323
Memory Organization	4M x 8, 2M x 16
Packaging	Tray

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	3 (168 Hours,30°C/60%RH)
REACH Status	REACH Unaffected
US ECCN	3A991B1A
HTS US	8542.32.0071
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The M29DW323DB70N3E is an IC (Integrated Circuit) component, specifically a flash memory device. It is a high-performance, non-volatile memory solution that offers reliable storage capabilities for various applications. Here are its key features: 1. Capacity: The M29DW323DB70N3E has a storage capacity of 32 megabits or 4 megabytes. 2. Organization: It is organized into 64 sectors of 64 kilobytes each, allowing for efficient management of data storage. 3. High-speed Performance: This flash memory device offers fast read and write operations, allowing for quick data access and high-speed data transfer rates. 4. Voltage Supply: It operates on a single power supply voltage range of 2.7V to 3.6V, making it compatible with a wide range of systems. 5. Industry-standard Interface: The M29DW323DB70N3E uses a standard asynchronous parallel interface, which is widely supported by many microcontroller and system architectures. 6. Sector Erase Capability: It provides sector erase capability, meaning specific sectors can be erased individually without affecting the contents of other sectors. 7. Data Retention: The flash memory has a long data retention period, ensuring the stored data is maintained reliably over time. 8. Endurance: The M29DW323DB70N3E is designed with high endurance, offering a high number of program and erase cycles for reliable and long-lasting performance