IS61LV25616AL-10BI

The IS61LV25616AL-10BI is an IC component that falls under the category of high-speed CMOS static RAM (Random Access Memory). Designed by Integrated Silicon Solution Inc. (ISSI), it is well-regarded for its high-performance capabilities and versatility. Let's delve into its key features and specifications: 1. Memory Capacity: The IS61LV25616AL-10BI boasts a memory capacity of 256K words, with each word consisting of 16 bits. This results in a total storage of 4,194,304 bits or 512K bytes. 2. Organization: The memory is organized into 32,768 rows and 16 columns, which allows for ease of data retrieval and manipulation. The device employs a 1-transistor/1-capacitor (1T/1C) cell configuration to achieve an efficient layout. 3. Access Speed: With a speed rating of 10 ns, the IS61LV25616AL-10BI ensures rapid and efficient data retrieval, enabling seamless execution of high-speed applications. It provides a synchronous read and write, ensuring reliable and accurate data transactions. 4. Low-power Consumption: This IC component is optimized for minimal power consumption, prioritizing efficiency and energy conservation. It offers low standby power requirements, making it suitable for applications that demand power-efficiency. 5. Voltage Compatibility: The IC operates with a supply voltage ranging from 3.0V to 3