IR2113STRPBF

Half Bridge 2A 3.3V~20V 2A SOP-16-300mil Gate Drive ICs
part number has RoHS
1 : $2.4300

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Dasenic Part Number
E48299-DS
Manufacturer Part #
IR2113STRPBF

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12789 In Stock

MOQ
1PCS
Delivery Time
Ship Within 48 Hours
Packaging
SOP-16-300mil
Quantity
Unit Price
$ 2.43
Total
$ 2.43

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.
ManufacturerInfineon Technologies
Integrated Circuits (ICs)Gate Drivers for Power MOSFETs and IGBTs
Product StatusActive
Operating Temperature-40°C ~ 150°C (TJ)
Package / Case16-SOIC (0.295", 7.50mm Width)
Input TypeNon-Inverting
Supplier Device Package16-SOIC
Voltage - Supply3.3V ~ 20V
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - V I L, V I H6V, 9.5V
Current - Peak Output ( Source, Sink)2A, 2A
High Side Voltage - Max ( Bootstrap)600 V
Rise / Fall Time ( Typ)25ns, 17ns

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Environmental & Export Classifications
EU RoHS StatusRoHS Compliant
REACH StatusREACH is not affected
US ECCNEAR99
China RoHS StatusGreen Symbol: Green and environmentally friendly product
Description (v) Features
The IR2113STRPBF is an IC component manufactured by Infineon Technologies. It is a high-speed gate driver specifically designed to drive power MOSFETs and IGBTs in half-bridge and full-bridge configurations. This single-chip device is commonly used in various applications including motor control, switch-mode power supplies, and uninterruptible power supplies (UPS). The IR2113STRPBF offers several key features that make it an ideal choice for driving high power devices. Firstly, it operates across a wide range of supply voltages from 10V to 20V, making it compatible with different power supply designs. This allows for flexibility in choosing the appropriate power source. Furthermore, this IC component integrates both high and low side drivers with an independent floating channel, allowing it to drive MOSFETs and IGBTs simultaneously. The independent floating channel ensures complete isolation between the high and low side, preventing cross-conduction and enhancing system safety. The IR2113STRPBF is equipped with a high pulse current buffer stage that improves the gate drive capability and enables fast rise/fall times. This feature ensures efficient switching of power devices, reducing power losses and enhancing overall system efficiency. Moreover, it incorporates an internal bootstrap diode, which simplifies the high-side driver power supply design. Another notable feature of the IR2113STRPBF is its adjustable dead time control

In Stock: 12789

MOQ
1PCS
Packaging
SOP-16-300mil
Delivery Time
Ship Within 48 Hours
Shipping Origin
Shenzhen or Hong Kong Warehouse
Quantity
Unit Price
$ 2.43
Total
$ 2.43

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.
Delivery
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