The IC component IR11662STRPBF is a high-performance half-bridge gate driver specifically designed to drive power MOSFETs and IGBTs. It offers a range of key features that make it suitable for a variety of applications. Here is an overview of its main features:
1. High voltage capability: The IR11662STRPBF can handle a high voltage supply of up to 600V, making it suitable for applications where high voltage switching is required.
2. Low side and high side outputs: It provides both low side and high side outputs, allowing for easy driving of power MOSFETs and IGBTs in half-bridge configurations.
3. Under-voltage lockout (UVLO): It incorporates an under-voltage lockout feature that prevents the IC from operating when the supply voltage falls below a certain threshold. This protects the driver and the power devices from operating in unsafe conditions.
4. Integrated bootstrap diode and high-side gate clamp: The IC includes an internal bootstrap diode and a gate clamp circuit, reducing the number of external components required and simplifying the design.
5. Logic level inputs: The IR11662STRPBF features logic level inputs compatible with most microcontrollers and digital circuits. This enables easy integration into various control systems.
6. Adjustable dead-time control: It allows for the adjustment of dead time between the high-side and low-side outputs, enabling efficient and safe switching of power devices
