The IC component S29GL01GS11FHIV13 is a flash memory device manufactured by Cypress Semiconductor. This component provides a high-performance and non-volatile storage solution for a wide range of applications. Here is an overview of its key features:
1. Memory Capacity: The S29GL01GS11FHIV13 has a storage capacity of 1 gigabit (1 Gb), which is equivalent to 128 megabytes (128 MB). This allows for ample space to store data, instructions, or firmware.
2. Flash Technology: It is based on the NOR flash memory technology, which offers fast read and write operations. The NOR architecture allows random access to any memory location, making it suitable for applications that require both random and sequential data access.
3. High-Speed Operation: This flash memory chip offers high-performance read and write speeds. The typical random access time is around 90 nanoseconds (ns), and the burst mode read operation can achieve speeds as fast as 28 megabytes per second (MB/s).
4. Organization and Interface: The S29GL01GS11FHIV13 is organized as 128 sectors, each containing 64 kilobytes (KB) of data. It utilizes a 16-bit data bus, making it compatible with systems that require wider data path interfaces.
5. Voltage Compatibility: This IC component operates with a single power supply voltage of 3.0 to 3
