The S34MS04G100BHI003 is an IC component that falls under the category of NAND Flash memory. It is manufactured by Cypress Semiconductor Corporation, a renowned American semiconductor company. Here are some key features and an overview of the S34MS04G100BHI003:
1. Density: The IC component offers a storage density of 4 gigabits (Gb), which is equivalent to 512 megabytes (MB). This high density makes it suitable for various applications that require large storage capacities.
2. Organization: The S34MS04G100BHI003 is organized as 2048 blocks, with each block containing 128 pages. Each page consists of 2112 bytes, including both data and spare area. This organization facilitates efficient read and write operations by allowing data to be accessed at a granular page level.
3. Performance: The IC component provides fast read and program speeds, enabling swift data transfers. It supports asynchronous random access, as well as burst read operations, making it suitable for applications requiring quick access to data.
4. Reliability: The S34MS04G100BHI003 incorporates various features to enhance data integrity and reliability. It utilizes advanced error correction codes (ECC) that can correct multiple random bit errors per 512-byte sector, ensuring data accuracy. Additionally, it supports software and hardware write protection, preventing unintended modifications to stored data
