S29GL064S90FHI040

Name: CLC016AJQ/NOPB
Brand: Texas Instruments
SKU: E0664B-DS
Price: 18.126 USD
Availability: InStock

IC FLASH 64MBIT PARALLEL 64FBGA

1 : $0.0000

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Dasenic Part Number

9A0A3D-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

S29GL064S90FHI040

Customer Reference

Datasheet

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365 Days Warranty
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1515 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

64-LBGA Tray

Quantity

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Manufacturer	Infineon Technologies
Integrated Circuits (ICs)	Memory
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	64-LBGA
Technology	FLASH - NOR
Supplier Device Package	64-FBGA (13x11)
Memory Size	64Mbit
Memory Type	Non-Volatile
Voltage - Supply	2.7V ~ 3.6V
Access Time	90 ns
Memory Format	FLASH
Memory Interface	Parallel
Write Cycle Time - Word, Page	60ns
Series	Automotive, AEC-Q100, GL-S
Base Product Number	S29GL064
Memory Organization	8M x 8, 4M x 16
Packaging	Tray

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	3 (168 Hours,30°C/60%RH)
REACH Status	REACH Unaffected
US ECCN	3A991B1A
HTS US	8542.32.0071
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The S29GL064S90FHI040 is an IC component manufactured by Cypress Semiconductor. It is a flash memory device that offers high-density storage capacity and fast read/write operations. Below are the key features and an overview of this component: 1. Overview: - The S29GL064S90FHI040 is a 64-megabit (8-megabyte) flash memory device. - It is organized as 8,388,608 words or 16,777,216 bytes. - The device operates on a 3.0 to 3.6V power supply and 2.7 to 3.6V I/O supply. - It utilizes a 128-word page programming architecture for fast and efficient programming. 2. Key Features: - Fast Read Access Time: The component provides a fast access time of 90 nanoseconds (ns), allowing for quick retrieval of data. - High-Density Storage: With a capacity of 64 megabits, the S29GL064S90FHI040 offers ample storage for various applications. - Page Mode Programming: The device supports page mode programming, allowing up to 128 words to be programmed simultaneously. - Enhanced Program and Erase Operations: The component offers improved programming and erase algorithms for reliable and efficient operation. - Sector Erase Capability: It supports sector erase operations, enabling specific sectors to be erased, rather than the entire memory