The IC component S29GL01GT13TFNV10 is a flash memory device manufactured by Cypress Semiconductor. It belongs to the S29GL01GT family of flash memory chips and is capable of storing up to 1 gigabit (1Gb) of data. Below are the key features and specifications of this component:
1. Memory Capacity: The S29GL01GT13TFNV10 offers a storage capacity of 1Gb, equivalent to 128 Megabytes (MB).
2. Organization: It is organized into 512 blocks, each containing 32K words (64 bytes per word). This organization allows for efficient read and write operations.
3. High-Speed Performance: The component supports high-speed data transfers with a maximum clock frequency of 70 MHz. This enables fast read and write operations, making it suitable for applications that require high-performance data storage.
4. Access Time: It offers a fast random access time of 80 ns, enabling quick retrieval of data.
5. Voltage Range: The S29GL01GT13TFNV10 operates at a supply voltage range of 2.7V to 3.6V, making it compatible with a wide range of applications.
6. Low Power Consumption: It is designed for low power consumption, minimizing energy usage and extending battery life in portable devices.
7. Sector Lockdown: This flash memory incorporates sector lockdown functionality, allowing certain sectors to be write-protected, ensuring data integrity and preventing accidental modification
