The IC component S29GL01GT11FHIV40 is a Flash memory device manufactured by Cypress Semiconductors. It is a 1 Gbit, single-voltage, 3.0V or 3.3V memory device with a burst mode read operation. Here are the key features of the component:
1. Memory Capacity: The S29GL01GT11FHIV40 offers a memory capacity of 1 Gbit (128 MB), allowing for storage of a large amount of data.
2. Architecture: This component is built using a MirrorBit technology, which combines a single transistor cell with a floating gate for each bit of data. This architecture enables reliable and high-performance memory storage.
3. High-Speed Performance: The IC supports a fast burst read operation, allowing for rapid data retrieval. It can achieve read speed of up to 90 ns, making it suitable for applications requiring quick access to stored data.
4. Voltage Support: The S29GL01GT11FHIV40 is designed to operate with a single voltage supply of either 3.0V or 3.3V. This flexibility enables compatibility with various system configurations.
5. Synchronous Burst Read Mode: The component supports synchronous burst read operations, which allows for continuous data transfer in multiple clock cycles. It operates using a clock signal to synchronize the data output, enhancing data transfer efficiency.
6. Erase and Program Operations: The Flash memory device provides sector-based erase and program operations
