The IC component S29GL01GT10TFI030 is a flash memory device manufactured by Cypress Semiconductor. It offers a high-density storage solution with a capacity of 1 gigabit (1 Gb). Here is an overview of its key features:
1. Memory Capacity: The S29GL01GT10TFI030 offers 1 Gb (128 MB) of non-volatile flash memory. This allows for storing a large amount of data, including program code and user data.
2. Organization: It is organized into blocks, sectors, and pages. The device contains multiple blocks, each composed of several sectors. Each sector consists of multiple pages. This organization enables efficient read, write, and erase operations.
3. High-Speed Performance: The component operates at a clock frequency of up to 100 MHz, enabling fast data transfers. It also supports burst read and burst program operations to maximize data throughput.
4. Page Programming: The S29GL01GT10TFI030 supports byte-wise programming within a page. This feature allows for flexible data programming, as only the required bytes need to be modified without erasing the entire block.
5. Fast Erase: The flash memory device offers sector-level and bulk erase capabilities. Sector erase allows for erasing specific sectors, while the bulk erase feature erases the entire memory array. These erase operations are performed quickly, saving time during development and production
