CY7C1425KV18-250BZC is a high-performance synchronous pipelined SRAM (Static Random-Access Memory) component manufactured by Cypress Semiconductor. It offers a range of advanced features and is widely used in applications such as networking, industrial automation, and telecommunications. Here is an overview and key features of the CY7C1425KV18-250BZC:
1. Memory Capacity: The CY7C1425KV18-250BZC provides a total memory capacity of 9,437,184 bits. It is organized as 4 Megabytes (Mb) with a 256K x 18 configuration.
2. High-Speed Operation: This IC component operates at a fast speed, with a maximum access time of 2.5 nanoseconds (ns). It offers high-performance read and write operations, ensuring quick data access and processing.
3. Synchronous Pipelined Design: The synchronous pipelined architecture of the CY7C1425KV18-250BZC allows different stages of a memory access operation to operate concurrently. It reduces internal delays and boosts overall memory performance.
4. Triple Data Rate (TDR) Read/Write: The CY7C1425KV18-250BZC supports Triple Data Rate (TDR), enabling data transfer on both edges of the clock signal. This feature significantly increases the effective data transfer rate, enhancing overall memory performance
