The IC component CY7C1415SV18-250BZC is a high-speed SRAM (Static Random Access Memory) device manufactured by Cypress Semiconductor Corporation. It offers a wide range of features and functionalities that make it suitable for various applications requiring high-performance memory solutions. Here is an overview of this IC component along with its key features:
1. Memory Capacity: The CY7C1415SV18-250BZC IC component offers a memory capacity of 18 Megabits (or 2 Megabytes), which is organized in a 1,048,576 word x 18-bit configuration. This large memory capacity makes it suitable for applications that require extensive data storage capabilities.
2. High-Speed Operation: This IC component operates at industry-leading speeds, offering access times as low as 6 nanoseconds (ns). It uses a synchronous interface to achieve these fast read and write timings, facilitating quick data transfers.
3. Low Power Consumption: The CY7C1415SV18-250BZC is designed to be power-efficient. It features a standby power mode that consumes minimal power during idle periods, making it an ideal choice for applications where power conservation is crucial.
4. Dual-Port Architecture: One of the key features of this IC component is its dual-port architecture. It allows simultaneous read and write operations from two independent memory banks. This architecture enables efficient data access, ideal for applications requiring concurrent memory operations
