The IC component DS1230Y-200IND+ is a non-volatile static RAM (NVSRAM) integrated circuit, manufactured by Maxim Integrated. It serves as a combination of a high-performance static RAM and a non-volatile memory, making it ideal for applications requiring both high-speed random access and non-volatile storage.
Key features of the DS1230Y-200IND+ include:
1. Non-volatility: The DS1230Y-200IND+ offers non-volatile data storage using an integrated lithium energy source. This ensures that data remains intact even in the absence of power, facilitating quick and seamless system startups.
2. High-density storage: With a capacity of 32 kilobits (4 kilobytes) of memory, the DS1230Y-200IND+ provides ample storage space for critical data and configurations, reducing the need for additional components.
3. Fast access and low power consumption: This IC component boasts high-performance static RAM functionality, offering access times as low as 90 ns. Additionally, it requires minimal power to retain data, making it energy-efficient in both active and standby modes.
4. Unlimited read and write cycles: The DS1230Y-200IND+ supports unlimited read and write cycles, which makes it well-suited for applications with frequent data modifications.
5. SRAM-compatible interface: It features an industry-standard parallel interface, allowing easy integration with existing microprocessor systems, controllers, and other devices that use static RAM
