DS1225AB-70IND

IC NVSRAM 64KBIT PARALLEL 28EDIP
part number has RoHS
1 : $0.0000

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Dasenic Part Number
5FEB0E-DS
Manufacturer
Manufacturer Part #
DS1225AB-70IND

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79 In Stock

MOQ
1PCS
Delivery Time
Ship Within 48 Hours
Packaging
28-DIP Module (0.600", 15.24mm)

Quantity

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ManufacturerMaxim Integrated
Integrated Circuits (ICs)Memory
Product StatusObsolete
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeThrough Hole
Package / Case28-DIP Module (0.600", 15.24mm)
TechnologyNVSRAM (Non-Volatile SRAM)
Supplier Device Package28-EDIP
Memory Size64Kb (8K x 8)
Memory TypeNon-Volatile
Voltage - Supply4.75V ~ 5.25V
Access Time70 ns
Memory FormatNVSRAM
Memory InterfaceParallel
Write Cycle Time - Word, Page70ns

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Environmental & Export Classifications
EU RoHS StatusRoHS Compliant
REACH StatusVendor is not defined
US ECCNProvided as per user requirements
China RoHS StatusOrange Symbol: Safe for use during the environmental protection period
Description (v) Features
The DS1225AB-70IND is an IC component manufactured by Maxim Integrated. This integrated circuit is a non-volatile SRAM (NVSRAM), which combines the benefits of both Static RAM (SRAM) and Electrically Erasable Programmable Read-Only Memory (EEPROM) technologies. It offers fast read and write access while ensuring data retention even when the power is lost. Here are some of its key features: 1. Non-volatile Memory: The DS1225AB-70IND offers non-volatile storage with a capacity of 64 kilobits (8 kilobytes). This means that the data stored in the memory will be retained even if the power supply is disconnected. 2. Fast Read/Write Speeds: With its SRAM-like architecture, this component provides fast read and write access times, enabling efficient data transfer and manipulation. 3. EEPROM Emulation: The DS1225AB-70IND behaves like a fast EEPROM, allowing random byte or page writes with minimal write cycle times. It supports byte-write, word-write, and burst-write operations. 4. 70ns Access Time: This component boasts a fast access time of 70 nanoseconds (ns), allowing for quick data transactions between the host system and the memory. 5. 10mA Low Power Consumption: The DS1225AB-70IND is designed to be power-efficient, consuming only 10mA of current during active read/write operations

In Stock: 79

MOQ
1PCS
Packaging
28-DIP Module (0.600", 15.24mm)
Delivery Time
Ship Within 48 Hours
Shipping Origin
Shenzhen or Hong Kong Warehouse

Quantity

Get pricing info from knowledgeable sales

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