LM5109BSDX/NOPB

Name: MAX16904RATB33+
Brand: Maxim Integrated
SKU: 0DA6E4-DS
Availability: InStock

1-A, 100-V half bridge gate driver with 8-V UVLO and high noise immunity

1 : $0.9540

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Dasenic Part Number

9DFB5D-DS

Manufacturer

Texas Instruments

Manufacturer Part #

LM5109BSDX/NOPB

Customer Reference

Datasheet

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Sample

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7084 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

8-WDFN Exposed Pad Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®

Quantity

Unit Price

$ 0.954

Total

$ 0.95

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Texas Instruments
Integrated Circuits (ICs)	Gate Drivers for Power MOSFETs and IGBTs
Product Status	Active
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-WDFN Exposed Pad
Input Type	Non-Inverting
Supplier Device Package	8-WSON (4x4)
Voltage - Supply	8V ~ 14V
Channel Type	Independent
Driven Configuration	Half-Bridge
Number of Drivers	2
Gate Type	N-Channel MOSFET
Logic Voltage - V I L, V I H	0.8V, 2.2V
Current - Peak Output ( Source, Sink)	1A, 1A
High Side Voltage - Max ( Bootstrap)	108 V
Rise / Fall Time ( Typ)	15ns, 15ns
Base Product Number	LM5109
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8542.39.0001
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.