M29W160EB70ZA6

Name: UPD78F1822AGBA-GAH-G
Brand: Renesas Electronics
SKU: 035B01-DS
Availability: InStock

IC FLASH 16MBIT PARALLEL 48TFBGA

1 : $0.0000

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Dasenic Part Number

514E45-DS

Manufacturer

STMicroelectronics

Manufacturer Part #

M29W160EB70ZA6

Customer Reference

Datasheet

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34 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

48-TFBGA

Quantity

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Manufacturer	STMicroelectronics
Integrated Circuits (ICs)	Memory
Product Status	Obsolete
Operating Temperature	-40°C ~ 85°C (TA)
Package / Case	48-TFBGA
Technology	FLASH - NOR
Supplier Device Package	48-TFBGA (6x8)
Memory Size	16Mb (2M x 8, 1M x 16)
Memory Type	Non-Volatile
Voltage - Supply	2.7V ~ 3.6V
Access Time	70 ns
Memory Format	FLASH
Memory Interface	Parallel
Write Cycle Time - Word, Page	70ns

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	Vendor is not defined
US ECCN	Provided as per user requirements
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The M29W160EB70ZA6 is an IC (Integrated Circuit) component manufactured by STMicroelectronics. It is a 16-megabit (2 megabyte) parallel flash memory, specifically designed for applications such as embedded systems, boot code storage, and digital cameras. Here's an overview of the key features of the M29W160EB70ZA6: 1. Density: The M29W160EB70ZA6 offers a storage density of 16 megabits or 2 megabytes, which means it can store a considerable amount of data for various applications. 2. Organization: This IC component is organized into 2,097,152 words, with each word containing 8 bits. It can be accessed through a parallel interface, providing fast and efficient data transfer. 3. Programming and Erasing: The M29W160EB70ZA6 supports both programming and erasing operations. It utilizes a single 3V power supply for these operations, making it suitable for low voltage applications. The programming can be done using a byte or word programming algorithm, while the erasing can be performed sector by sector or in the whole chip. 4. High-Speed Performance: This IC component offers fast access and program/erase operations with high-speed performance. It features random access time of 70 ns, and a program/erase time of 100 microseconds per byte/word