The IC component S29GL256S10TFV010 is a flash memory device manufactured by Cypress Semiconductor Corporation. It offers high-density storage with a capacity of 256 megabits (32 megabytes) and operates with a supply voltage of 1.65V to 2.2V.
One of the key features of the S29GL256S10TFV010 is its access time, with a random access time of 100 nanoseconds (ns), allowing for fast read and write operations. It also supports a simultaneous read and write operation, enabling efficient data transfer.
This flash memory component incorporates the MirrorBit technology, which ensures reliability and durability by utilizing a split-gate cell design. This design provides improved data retention, resulting in a longer lifespan for the device.
Furthermore, the S29GL256S10TFV010 offers a 16-bit parallel interface for data transfer, making it compatible with a wide range of applications and systems. It employs a Toggle bit feature, which allows the memory to toggle between two bit states during programming, erasing, and read operations, enhancing its performance.
The S29GL256S10TFV010 also supports various modes such as program, erase, and read operations, fulfilling the requirements of different applications. Additionally, it features an advanced Sector Protection mechanism, enabling users to protect specific sectors of memory from accidental erasure or modification
