The S29GL01GT12TFVV10 is an IC (Integrated Circuit) component, specifically a flash memory device, manufactured by Cypress Semiconductor. It belongs to the S29GL01GT family of devices. It is a high-performance, non-volatile memory solution that offers a range of features and capabilities. Here is an overview of the key features of the S29GL01GT12TFVV10:
1. Memory Capacity: The S29GL01GT12TFVV10 has a memory capacity of 1 Gigabit (Gb). This translates to approximately 128 Megabytes (MB) of data storage.
2. Flash Technology: It utilizes NOR Flash memory technology, which allows for high-speed data read and write operations. This makes it suitable for applications that require fast access to stored data.
3. Organization: The memory is organized into 128 sectors, each containing multiple blocks. Each block consists of multiple pages, simplifying data management and access.
4. Single Voltage Operation: The S29GL01GT12TFVV10 operates on a single voltage supply of 2.7V to 3.6V. This simplifies the power supply requirements and enables compatibility with various systems.
5. High-Speed Performance: It offers a fast access time and read speed, ensuring efficient data retrieval and transfer. The device supports a 120 ns random access time, allowing for quick access to data stored in memory
