The IRS2113PBF is a high voltage, high-speed power MOSFET and IGBT driver integrated circuit (IC) component. It is specifically designed to drive N-channel power MOSFETs and IGBTs in various power applications, including motor control and power inverters. This IC offers several key features that make it suitable for demanding applications.
One of the primary features of the IRS2113PBF is its high voltage capability. It can operate at a voltage range of up to 600V, making it ideal for high voltage applications. This capability allows the IC to handle high power levels while maintaining efficient and reliable operation.
Furthermore, the IRS2113PBF has two outputs, designated as "HO" and "LO," which can independently drive two power MOSFETs or IGBTs. This dual output configuration makes it suitable for applications requiring a half-bridge or full-bridge topology.
The IC also incorporates a high-speed propagation delay, ensuring precise and synchronized switching of the power devices. This feature is essential for realizing efficient and high-performance power conversion systems.
Another noteworthy feature is the integrated bootstrap function. The IRS2113PBF incorporates a bootstrap diode and a high-side gate driver, eliminating the need for an external discrete bootstrap circuitry. This simplifies the overall system design and reduces component count and costs
