The IR21814SPBF is an IC component designed by Infineon Technologies. It is a highly integrated half-bridge gate driver IC that is specifically designed for driving MOSFETs and IGBTs in high-power applications.
Key features of the IR21814SPBF include:
1. Compact and Integrated Design: The IC incorporates a half-bridge driver, high voltage level-shifter, cross-conduction control, and bootstrap diode. This integration simplifies the circuit design and reduces the component count, saving board space.
2. High Voltage Capability: The IC can handle a maximum voltage of up to 600V, making it suitable for a wide range of power applications.
3. Bootstrap Operation: The IC utilizes a bootstrap mechanism to supply the high-side gate drive voltage. This method eliminates the need for an external high-side power supply, saving cost and complexity of the circuit design.
4. Integrated Cross-Conduction Control: The IC incorporates an active pull-down circuit to prevent cross-conduction and minimize shoot-through current during switching transitions, ensuring efficient power conversion and reducing power losses.
5. Programmable Features: The IC offers programmable under-voltage lockout (UVLO), dead time, and fault protection, allowing for customization according to application requirements.
6. High Current Drive: The IC provides a peak output current of up to 2A for driving power MOSFETs and IGBTs, ensuring fast and efficient switching
